Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• -ion etch (RIE) process in a Plasmapro 100 ICP300 from Oxford Instruments, with an etch rate of roughly 8 nm/min. (e) Fine circuit pattern. Electron-beam lithography defines the finer structures, such as the meandering nanowire inductor, the shunt inductor, and the interdigital gap of the capacitor. We

• -beam lithography and reactive-ion etching. We simulate the electromagnetic response of the meandering nanowire inductors using Sonnet, a quasi-3D electromagnetic simulator [32], which has the feature of including sheet kinetic inductance Lk,□. We begin by simulating the meandering inductor itself to

• large enough to realize the desired kinetic inductance. To understand this constraint, we turn to electromagnetic simulations. Electromagnetic simulations In this work, we explore thin-film nanowires of width w = 75, 100, and 200 nm, which we can fabricate with a high degree of uniformity using electron

Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates

• Aleksandra Szkudlarek,
• Jan M. Michalik,
• Inés Serrano-Esparza,
• Zdeněk Nováček,
• Veronika Novotná,
• Piotr Ozga,
• Czesław Kapusta and
• José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

• shape control are very limited in those cases. Conventional electron beam lithography (EBL) reaches the resolution of a few nanometers. However, it leaves residual resists on the surface [9], which strongly affects electrical transport properties [10]. A similar high resolution can be achieved with e

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• resolution as well as a low sensitivity. Its viscosity is 16.4 mPa·s. After spinning at 4000 rpm and baking at 180 °C for 5 min, it has a thickness of around 300 nm. The exposure is carried out using an electron beam lithography system Vistec EBPG 5000+ operating at 100 kV. Working on a thin transparent

• results are consistent with the observations from LTEM. Conclusion Electron beam lithography in combination with lift-off and IBE methods for the preparation of Py nanodisks has been optimized. The results have been compared using SEM and TEM. In addition, the application of stencil lithography for the

• preparation of Py nanodisks has been demonstrated, and the results were compared with the results obtained with electron beam lithography. Among these methods, dry etching stands out for its sharp and well-defined edges, while the hard mask method offers the least precise results. In a broader comparison, IBE

Hierarchically patterned polyurethane microgrooves featuring nanopillars or nanoholes for neurite elongation and alignment

• Lester Uy Vinzons,
• Guo-Chung Dong and
• Shu-Ping Lin

Beilstein J. Nanotechnol. 2023, 14, 1157–1168, doi:10.3762/bjnano.14.96

• fabrication. For instance, traditional techniques, such as electron-beam lithography, laser writing, and cleanroom photolithography, have flexibility in design but require costly equipment [13][14]. Relatively cheaper techniques, such as anodization, electroplating, and electrospinning, are limited by the

Observation of multiple bulk bound states in the continuum modes in a photonic crystal cavity

• Rui Chen,
• Yi Zheng,
• Xingyu Huang,
• Qiaoling Lin,
• Chaochao Ye,
• Meng Xiong,
• Martijn Wubs,
• Yungui Ma,
• Minhao Pu and
• Sanshui Xiao

Beilstein J. Nanotechnol. 2023, 14, 544–551, doi:10.3762/bjnano.14.45

• To verify the multiple modes in the bandgap mirror-assisted BIC cavity, several samples with different sidelengths (w) were fabricated by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching on 500 nm thick AlGaAs on a sapphire wafer. The parameter sweep of w around 400 nm was

A mid-infrared focusing grating coupler with a single circular arc element based on germanium on silicon

• Xiaojun Zhu,
• Shuai Li,
• Ang Sun,
• Yongquan Pan,
• Wen Liu,
• Yue Wu,
• Guoan Zhang and
• Yuechun Shi

Beilstein J. Nanotechnol. 2023, 14, 478–484, doi:10.3762/bjnano.14.38

• than that of a MIR grating coupler with conventional tapered linear gratings (5.49%). Because the proposed structure is geometrically simple, it is easy to implement experimentally. The proposed MIR FGC based on Ge-on-Si can be fabricated by electron beam lithography (EBL) and inductively coupled

Gap-directed chemical lift-off lithographic nanoarchitectonics for arbitrary sub-micrometer patterning

• Chang-Ming Wang,
• Hong-Sheng Chan,
• Chia-Li Liao,
• Che-Wei Chang and
• Wei-Ssu Liao

Beilstein J. Nanotechnol. 2023, 14, 34–44, doi:10.3762/bjnano.14.4

• limit of commercially available techniques down to the 10 nm scale in the form of extreme ultraviolet lithography [1][2], though equipment cost and energy consumption substantially increase with smaller desired feature dimension. On the contrary, direct-write methods like electron beam lithography can

Double-layer symmetric gratings with bound states in the continuum for dual-band high-Q optical sensing

• Chaoying Shi,
• Jinhua Hu,
• Xiuhong Liu,
• Junfang Liang,
• Jijun Zhao,
• Haiyan Han and
• Qiaofen Zhu

Beilstein J. Nanotechnol. 2022, 13, 1408–1417, doi:10.3762/bjnano.13.116

• structure can be fabricated as follows [56]. At first, the gratings of the bottom layer are fabricated using electron beam lithography (EBL) and reactive ion etching (RIE) on a SOI chip with a single crystalline silicon device layer and a buried oxide (BOX), where this SOI chip serves as the receiving

Roll-to-roll fabrication of superhydrophobic pads covered with nanofur for the efficient clean-up of oil spills

• Patrick Weiser,
• Robin Kietz,
• Marc Schneider,
• Matthias Worgull and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2022, 13, 1228–1239, doi:10.3762/bjnano.13.102

• , too [7]. Multiple techniques exist to prepare self-cleaning surfaces. Direct laser writing and electron beam lithography have been employed successfully to create superhydrophobic surfaces. However, due to low writing speeds these approaches are not viable for surface areas larger than a few square

Effects of focused electron beam irradiation parameters on direct nanostructure formation on Ag surfaces

• Jānis Sniķeris,
• Vjačeslavs Gerbreders,
• Andrejs Bulanovs and
• Ēriks Sļedevskis

Beilstein J. Nanotechnol. 2022, 13, 1004–1010, doi:10.3762/bjnano.13.87

• surfaces undergoing irradiation by a focused electron beam. Keywords: atomic force microscopy; electron beam; lithography; nanostructure; silver; sputtering; surface; Introduction Metallic nanostructures have various uses, including in nano-electro-mechanical systems [1], plasmonic biosensors [2], and

Zinc oxide nanostructures for fluorescence and Raman signal enhancement: a review

• Ioana Marica,
• Fran Nekvapil,
• Maria Ștefan,
• Cosmin Farcău and
• Alexandra Falamaș

Beilstein J. Nanotechnol. 2022, 13, 472–490, doi:10.3762/bjnano.13.40

• ordered hybrid nanostructured substrates, ranging from more expensive and laborious ones, such as pulsed laser deposition or hydrothermal growth, followed by sputtering processes [31] or electron beam lithography to more cost-efficient and simple ones, such as photochemical deposition of metallic NPs or a

Investigation of electron-induced cross-linking of self-assembled monolayers by scanning tunneling microscopy

• Patrick Stohmann,
• Sascha Koch,
• Yang Yang,
• Christopher David Kaiser,
• Julian Ehrens,
• Jürgen Schnack,
• Niklas Biere,
• Dario Anselmetti,
• Armin Gölzhäuser and
• Xianghui Zhang

Beilstein J. Nanotechnol. 2022, 13, 462–471, doi:10.3762/bjnano.13.39

• role in science and technology. A highly focused electron beam is employed to create nanostructures via electron-beam lithography [1], and has been further developed to produce three-dimensional structures through controlled dissociation of precursor molecules [2]. Electron-induced chemistry has also

Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes

• Max Mennicken,
• Sophia Katharina Peter,
• Corinna Kaulen,
• Ulrich Simon and
• Silvia Karthäuser

Beilstein J. Nanotechnol. 2022, 13, 219–229, doi:10.3762/bjnano.13.16

• nanoelectrodes separated by gaps of 8 to 20 nm. They are fabricated by electron beam lithography (EBL) in a lift-off process while using a self-aligned Al2O3 hard mask to define the nanogap size [20][21]. The resulting nanoelectrode pairs are used for the on-chip preparation of Ru(TP)2-complex wires according to

• using electron beam lithography and lift-off [21]. These nanoelectrode samples with gap sizes of 8 to 20 nm between the electrodes were used in order to fabricate Ru(TP)2-complex wire devices. According to the Ru-complex wire growth procedure described above, the samples were treated first with MPTP

• wavelength selection with monochromator (MS257 Oriel). The radiant power was 90 nW/cm2 and the optical setup was coupled via a fiber-cable to the optical cryostat. Results and Discussion Ru(TP)2-complex wire growth Ru(TP)2-complex wires were grown between nanoelectrodes fabricated via electron beam

Irradiation-driven molecular dynamics simulation of the FEBID process for Pt(PF₃)₄

• Alexey Prosvetov,
• Alexey V. Verkhovtsev,
• Gennady Sushko and
• Andrey V. Solov’yov

Beilstein J. Nanotechnol. 2021, 12, 1151–1172, doi:10.3762/bjnano.12.86

• . The methodology can also be adjusted to simulate the nanostructure formation by other nanofabrication techniques using electron beams, such as direct electron beam lithography. In the present study, the methodology is applied to the IDMD simulation of the FEBID of Pt(PF3)4, a widely studied precursor

• , novel techniques exploiting the irradiation of nanosystems with collimated electron and ion beams have been developed [2][3]. One of these techniques is electron beam lithography (EBL), which is similar to conventional optical lithography but relies on the change of solubility after electron exposure of

Uniform arrays of gold nanoelectrodes with tuneable recess depth

• Elena O. Gordeeva,
• Ilya V. Roslyakov,
• Alexey P. Leontiev,
• Alexey A. Klimenko and
• Kirill S. Napolskii

Beilstein J. Nanotechnol. 2021, 12, 957–964, doi:10.3762/bjnano.12.72

• direct-writing using electron beam lithography [11][12] or ion beam milling [13][14]) are limited by the ensemble area and expensive in mass production, but allow one to precisely tune the parameters of an array (a geometry of individual electrodes and the distance between them) over a wide range. An

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• tone resist) or soluble (positive tone resist) in the subsequent development step. The drive to fabricate devices with ever reducing dimensions has meant that alternatives to diffraction-limited photon-based lithography have evolved, using charged particle beams [103]. Electron beam lithography (EBL

The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication

• Victor Deinhart,
• Lisa-Marie Kern,
• Jan N. Kirchhof,
• Sabrina Juergensen,
• Joris Sturm,
• Enno Krauss,
• Thorsten Feichtner,
• Sviatoslav Kovalchuk,
• Michael Schneider,
• Dieter Engel,
• Bastian Pfau,
• Bert Hecht,
• Kirill I. Bolotin,
• Stephanie Reich and
• Katja Höflich

Beilstein J. Nanotechnol. 2021, 12, 304–318, doi:10.3762/bjnano.12.25

• by measuring the bright optical modes [59]. The target geometry for all fabrication techniques is a particle radius of 45 nm with a gap size of 35 nm. This is the geometry that can reliably fabricated by resist-based electron beam lithography on physically sputtered gold layers (cf. Figure 7a). Later

Functional nanostructures for electronics, spintronics and sensors

• Anatolie S. Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1704–1706, doi:10.3762/bjnano.11.152

• technology including lift-off electron-beam lithography followed by ultra-high-vacuum deposition of materials that was used for fabrication of nanostructured quasi-1D chains of Josephson junctions. This was followed by the work of Mohammed et al. [12] who presented a smart vacuum technology for the design of

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

• Serguei Chiriaev,
• Luciana Tavares,
• Vadzim Adashkevich,
• Arkadiusz J. Goszczak and
• Horst-Günter Rubahn

Beilstein J. Nanotechnol. 2020, 11, 1693–1703, doi:10.3762/bjnano.11.151

• PMMA, it has a much higher mechanical toughness, thermal resistance, chemical stability, and as PMMA, it is widely used in optical applications. A range of publications show that, owing to its radiation susceptibility, PC can be used as a positive or negative resist for electron beam lithography [15

Fabrication of nano/microstructures for SERS substrates using an electrochemical method

• Jingran Zhang,
• Tianqi Jia,
• Xiaoping Li,
• Junjie Yang,
• Zhengkai Li,
• Guangfeng Shi,
• Xinming Zhang and
• Zuobin Wang

Beilstein J. Nanotechnol. 2020, 11, 1568–1576, doi:10.3762/bjnano.11.139

• machined by using lithography-based method [15][16][17][18][19][20]. Additionally, nanostructures are also fabricated by hybrid lithography [21][22][23][24][25][26] methods combined with dry etching or wet etching. For example, the commercial Klarite substrate [21][22][23] machined by electron beam

• lithography (EBL) and wet etching consists of 1 μm deep square-based pyramidal pits in the silicon surface. A rhodamine solution (10−4 mol·L−1) is then detected using the Klarite substrate. Candeloro et al. [24] employed EBL and reactive ion etching to machine nanoholes of 400 nm diameter and 50 nm depth

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• synthesized using a CVD microreactor method, described in detail in [33], directly on 285 nm SiO2/Si substrates, which also served as the back-gate in the FET configuration. MoS2 flakes were contacted with electrodes using standard electron beam lithography on polymethyl methacrylate (PMMA) resist, followed

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

• Santiago H. Andany,
• Gregor Hlawacek,
• Stefan Hummel,
• Charlène Brillard,
• Mustafa Kangül and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111

• sensitivities to helium ion irradiation than to electron irradiation in terms of charge per area [14]. Patterning resolution down to 4 nm has been demonstrated on HSQ resist [15], surpassing electron beam lithography, which greatly suffers from the proximity effect. In a combined AFM–HIM setup, the AFM could be

• to be navigated onto the region of interest (Figure 2b,c) to perform AFM topography imaging (Figure 2d). PMMA has traditionally been used as a positive resist in electron beam lithography. Helium ion beam lithography has emerged as a powerful technique to achieve even smaller feature size thanks to

Transition from freestanding SnO₂ nanowires to laterally aligned nanowires with a simulation-based experimental design

• Jasmin-Clara Bürger,
• Sebastian Gutsch and
• Margit Zacharias

Beilstein J. Nanotechnol. 2020, 11, 843–853, doi:10.3762/bjnano.11.69

• laterally aligned NWs in sensor or electronic devices, control of the NW length is highly desired. Longer NWs can be contacted by means of standard lithography processes and do not require electron-beam lithography [12][28]. In the experiments presented in Figure 6, the process time was increased from 8 min

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

Electromigration-induced directional steps towards the formation of single atomic Ag contacts

• Atasi Chatterjee,
• Christoph Tegenkamp and
• Herbert Pfnür

Beilstein J. Nanotechnol. 2020, 11, 680–687, doi:10.3762/bjnano.11.55

• ultrathin Ag films. Experimental Low-doped Si(100) substrates (1000 Ω·cm at 300 K), which are good insulators at temperatures around 100 K, were used. Structuring was carried out by a three-step process. As a first step, we patterned the contact pads by photolithography. Secondly, electron beam lithography